GAAS Symposium - Awards 2001

GAAS^® PRIZE

PREVIOUS WINNERS

Year	Awarded Papers
2005	K. Yamanaka, K. Iyomasa, H. Ohtsuka et al, MITSUBISHI ELECTRIC CORPORATION,Japan
	S and C band Over 100W GaN HEMT 1-chip High Power Amplifiers with Cell Division Configuration (sponsored by Alcatel Alenia Spazio)
	S. Seo, D. Pavlidis, J. S. Moon, Technische Universität Darmstadt, Germany
	A Wideband Balanced AlGaN/GaN HEMT MMIC Low Noise Amplifier for Transceiver Front-ends (sponsored by ELISRA)
	R. Driad, K. Schneider, R. Makon et al, Fraunhofer Institute of Applied Solid State Physics - IAF, Germany
	InP DHBT-based IC technology for high-speed data communications (sponsored by Win Semiconductors)
	J. Godin, M. Riet, A. Konczykowska et al, Alcatel-Thales III-V Lab, France
	A GaAsSb/InP HBT circuit technology (sponsored by UMS)
2004	D.A.J. Moran, E. Boyd, K. Elgaid, H. Mc Lelland, C.R.Stanley, I.G.Thayne, University of Glasgow, UK
	50nm T-gate Lattice Matched InP HEMT’s with f_T of 430 GHz using a non–annealed ohmic contact process (sponsored by ELISRA)
	D.K.Krause, R.Q.Quay, R.K.Kiefer, A.T. Tessman, H.M. Massler, A.L.Leuther,T.M. Merkle, S.M. Mueller, M.M.Mikulla, M.S. Schlechtweg and G.W. Weiman, Fraunhofer Institute, Germany
	Robust GaN HEMT Low Noise Amplifier MMIC’s for X Band Applications (sponsored by UMS)
	A.B. Bessemoulin, J.G.Grunenputt, E.K. Kohn, P.F. Fellon, UMS, Fraunhofer Institut and University of Ulm,Germany
	Coplanar W-band Low Noise Amplifier MMIC using 100 nm Gate length GaAs PHEMT’s (sponsored by Alenia Spazio)
2003	J.L. Polleux, F. Moutier, A.L. Billabert, C. Rumelhard, E. Sönmez, H. Schumacher, ESYCOM, France and Ulm University, Germany
	An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications: Modeling and first Experimental Results (sponsored by ELISRA)
	Karim W. Hamed, Alois P. Freundorfer, and Yahia.M.M.Antar, Queen’s University and Royal Military College, Kingston, Canada
	A Novel 20 to 40 GHz Monolithic InGaP/GaAs HBT Double Balanced Mixer (sponsored by UMS)
	Noriyuki Watanabe, Masahiro Uchida, Hideo Yokohama, Gako Araki, NTT Advanced Technology Corporation, Japan
	Influence of carbon sources on thermal stability of Cdoped base InP/InGaAs heterojunction bipolar transistors (sponsored by Alenia)
2002	R. Lossy, P. Heymann, J. Wurfl, N. Chaturvedi, S. Muller, K. Kohler, Ferdinand-Braun Institut fur Hochstfrequenztechnik, Berlin, Germany, and Fraunhofer-Institut fur Angewandte Festkorperphysik, Freiburg, Germany
	Power RF-operation of AlGaAN/GaN HEMTs grown on insulating silicon carbide substrates
	T. Reveyrand, C. Maziere, J.M. Nebus, R. Quere, A. Mallet, L. Lapierre, J. Sombrin, University of Limoges, France, and Cnes Toulouse, France
	A calibrated time domain envelope measurement system for the behavioral modeling of power amplifiers
	K. Beilenhoff, P. Quentin, S. Tranchant, O. Vaudescal, M. Parisot, H. Daembkes, UMS, France
	Full 26GHz MMIC chipset for telecom applications in SMD-type packages
2001	P Bianco, S D Guerrieri, G Ghione, M Pirola, C U Naldi, C Florian, G Vannini, A Santarelli, F Filicori and L Manfredi: University of Torino, Italy
	Optimum design of a new pre-distortion scheme for high linearity K-band MMIC power amplifiers
	A P de Hek, A de Boer and T Svensson: TNO Physics and Electronics Laboratory, The Netherlands, Ericsson Microwave Systems AB, Sweden
	C-band 10-watt HBT high power amplifier with 50% PAE
	E Malaver, J A Garcia, A Taznio and A Mediavilla: Universidad de Los Andes, Venezuela, TTI Norte SA, Spain, * Universidad de Cantabria, Spain
	A novel approach for highly linear automatic gain control of a HEMT small-signal amplifier