GAAS PhD STUDENT FELLOWSHIP

Chair Dr. Rocco Giofrè

The GAASâ Association sponsors three student fellowships of  €2000 each, to be given to young full-time PhD students having an accepted paper at EuMIC 2019 (formerly GAASâ).

 

Purpose:  
To recognize and provide financial assistance to international PhD students who show promise and interest in pursuing a graduate degree in microwave electronics.

Conditions:

1.    The student must be actively pursuing  a PhD or Doctorate degree in electrical, electronics or telecommunication engineering, applied physics or other appropriate field on full-time basis at an accredited institution of higher learning.

2.     The award is for the sole use of the graduate student.

3.   The award is granted in addition to any other support being received by the student.

4.       There is no limit to the number of applicants from one institution. However, only one award will be made per institution.

5.       Applicants are allowed to compete for the award more than once. However, each student can be given the Award just once (including previous fellowships for GAAS Conferences).

6.      The deadline for the submission of Fellowship Applications is the 1 June 2019.

Elegibility:

1.   Applicant must have a Bachelor Or Master degree in engineering, applied physics, computer science or other appropriate field from an accredited institution of higher Education and must be under 30 years-old at the deadline.

2.   Applicant must be enrolled in Ph.D. program as a full-time student in an accredited, degree granting institution of higher learning.

3.  Applicant must be engaged in research necessary for the degree program, not just course work.

4.   Research work must clearly be in the microwave electronics area supervised by a full-time faculty member.

5.    Applicant must be the first author and the paper must have been accepted for oral/poster presentation at the next EuMIC 2019 (formerly GAASâ). 

6.    There are no citizenship restrictions.

 Application:    

The student should submit an electronic version in Adobe Acrobat PDF format of the following documents:

1.  A complete  application form.

2.  Contact information including email addresses and phone numbers to facilitate communication.

3.  The supporting documents described in the Application form

     It is the responsibility of the student to ensure that letters of reference and other documents reach the address below by the deadline.  

     If any of the items is missing the application wiIl not be considered for the award.

Mailing address:

Dr. Rocco Giofrè

Email: giofr@ing.uniroma2.it

 

Deadline:
The deadline for the application is 1 June 2019

Announcement:  
Winners will be announced in the EuMIC Conference Final Session.

 

 

PREVIOUS WINNERS

 

Year Awarded Students
2016 1)
 Ana Belen Amado Rey, Y. Campos-Roca, C. Friesicke, A. Tessmann, R. Lozar, S. Wagner, A. Leuther, M. Schlechtweg, and O. Ambacher

A 280 GHz Stacked-FET Power Amplifier Cell using 50 nm Metamorphic HEMT Technology
2)
 Cheng Jen-Hao, Yi-Hsien Lin, Wen-Jie Lin, Jeng-Han Tsai, Tian-Wei Huang and Huei Wang

An Integrated Dual-Band Transmitter for Vital Sign Detection Radar Applications in 0.18- m CMOS
3)
 Norshakila Haris, Peter B. K. Kyabaggu, Mohammad. A. Alim, Ali A. Rezazadeh
Monolithic Integration of Vertical-Oriented Schottky Diode using 0.5×200 μm2 GaAs pHEMT for Microwave Limiter Applications
2015 1)
 Mohammad Abdul Alim, A. A. Rezazadeh, M. M. Ali, P. B. Kyabaggu,, N. Haris, C. Gaquiere University of Manchester, Manchester, United Kingdom
0.25um AlGaN/GaN HEMT Nonlinearity Modelling and Characterization Over a Wide Temperature Range
2014
Nobody

2013

 1)

Alireza Shamsafar, M. Elnaz Abaei, Luigi Boccia, Tatyana Purtova, Giandomenico Amendola and Hermann Schumacher Universita' della Calabria, Dipartimento di Elettronica, Informatica e Sistemistica, Via Bucci, 41 D-2, 87036 Arcavacata di Rende (CS) – Italy

On chip Wide Band Power Divider
2)

Riccardo Danieli, L. Piazzon, R. Giofrè, P. Colantonio, F. Giannini, Univ. of Roma Tor Vergata, Italy
Low cost AM/AM and AM/PM characterization setup based on scalar measurements

2012

 1)

Gennaro Gentile, M. Spirito, L.C.N de Vreede, B. Rejaei R. Dekker, P. de Graaf Delft University of Technology, Stevinweg 1, 2628 CN Delft, The Netherlands

Silicon Integrated Waveguide Technology for mm-Wave Frequency Scanning Array
2)

Paul Saad, L. Piazzon, P. Colantonio, J. Moon, F. Giannini, K. Andersson, B. Kim, and C. Fager, Chalmers University of Technology, Kemivägen, 9 - 41296 Gothenburg, Sweden
Multi-band/Multi-mode and Efficient Transmitter Based on a Doherty Power Amplifier

2011

 1)

Bilal Elkassir, S.Wane, NXP-Semiconductors, Esplanade Anton Philips 14906, Colombelles Caen – France
Design and Verification of Built-in-Self-Test (BIST) for RF, and Microwave Applications
2)

Luca Piazzon, P. Colantonio, F. Giannini, and R. Giofrè, Univ. of Roma Tor Vergata, Italy
New Generation of Multi-Step Doherty Amplifier

2010

 1)

Y. Chen, K. Mouthaan, and Marcel Geurts, Univ. of Singapore, Singapore
A Varactorless VCO with 15% Continuous Frequency Tuning Range and 0.2 dB Output Power Variation
2)

J. P. H. Tan, J. Yuan, A. A. Rezazadeh and Q. Sun, Univ. of Manchester, UK
Temperature Dependent Small-Signal Model Parameters Analysis of AlGaAs/InGaAs pHEMTs in Multilayer 3D MMIC Technology
3)

A. Olivier, A. Noudeviwa, et al, IEMN, France.
High Frequency Performance of Tellurium δ-Doped AlSb/InAs HEMTs at Low Power Supply

2009

 1)

R. Quaglia, V. Camarchia, S. Donati Guerrieri, et al, Turin Polytechnic, Italy
Real-time FPGA-based base band predistortion of W_CDMA 3GPP high-efficiency power amplifiers: comparing GaN HEMT and Si LDMOS predistorted PA performances
2)

G. Liu, Bernd Schleicher, Tatyana Purtova, and Hermann Schumacher, Ulm University, Germany
Fully Integrated Millimeter-Wave VCO Using Slow-Wave Thin-Film Microstrip Lines for Chip Size Reduction
3)

P. Cruz, and N. Borges Carvalho, University of Aveiro, Portugal
PWM Bandwidth and Wireless System Peak-to-Minimum Power Ratio

2008

 1)

E. Cipriani, P. Colantonio, F. Giannini, and R. Giofré, University of Rome Tor Vergata, Italy
Optimization of Class E Power Amplifier Design above Theoretical Maximum Frequency
2)

J. Yuan, A. A. Rezazadeh, J. Lu, Q. Sun and V. T. Vo, University of Manchester, UK
Design and Temperature Dependent Analysis of GaAs Multilayer Transmission Lines
3)

M. Abbasi, S. E. Gunnarsson, et al, Chalmers University , Sweden
Integrated 60 GHz Circuits and Systems for High-Speed Communications

2007

 1)

D. B. Venkatesha, S. Chitrashekaraiah, et al, University of Manchester, UK
Interpreting InGaP/GaAs DHBT Eye Diagrams Using Small Signal Parameters
2)

F. Fantini, R. Cignani, and A. Santarelli, University of Bologna, Italy
HB Analysis of Injection Locked Oscillators using commercial CAD tools
3)

V. Di Giacomo, A. Santarelli, et al, University of Ferrara, Italy
Low-Frequency Dynamic Drain Current Modeling in AlGaN-GaN HEMTs

2006

 1)

D. Resca, A. Santarelli, et al, University of Bologna, Italy
A distributed approach for millimetre-wave electron device modelling
2)

A. Kahn, A. A. Rezazadeh, University of Manchester, UK
Bias and Temperature Dependant Third Order Nonlinearity of GaAs DHBTs and its use in Extracting Thermal Resistance
3)

O. Jardel, R. Quéré, et al, University of Limoges, France
An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities
3bis)

E. Gatard, Philippe Bouysse, et al, University of Limoges, France
A Physics-Based Nonlinear Model of Microwave P-I-N Diode for CAD

2005

 1)

A. Raffo, A. Santarelli, P. A. Traverso et al, University of Ferrara, Italy
Simplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices
2)

M. Movahhedi, A. Abdipour, AmirKabir University of Technology, Iran
Accelerating the Transient Simulation of Semiconductor Devices Using Filter-Bank Transforms
3)

L. Krishnamurthy, Q. Sun, T. Vo et al, The University of Manchester, United Kingdom
A comparative study of active and passive GaAs microwave couplers
4)

V. Manan, S. Long, University of California, Santa Barbara, United States
A Dual band (10/16 GHz) p-HEMT VCO
5)

P. Colantonio, F. Giannini, R. Giofrè et al, University of Rome Tor Vergata, Italy
A C-Band High Efficiency Second Harmonic Tuned Hybrid Power Amplifier in GaN Technology (A half of the award)
5bis)

P. Colantonio, F. Giannini, E. Limiti, A. Nanni
Investigation of IMD Asymmetry in Microwave FETs via Volterra Series (A half of the award)

2004

 1)

G. Conte, S. Donati Guerrieri, F. Bonani, G. Ghione, Politecnico di Torino, Italy
Physics-based low-frequency noise modelling in small- and large-signal RF device operation
2)

D.H. Kim, H. H. Noh, S. J. Yeon, J. H. Lee, K. S. Seo, Seoul University, Korea
High fT 30nm In0.7GaAs HEMT's Beyond Lithography Limitations
3)

M.C.J.C.M. Krämer, R.C.P. Hoskens, B. Jacobs, J.J.M. Kwaspen, E.M. Suijker, A.P. de Hek, F. Karouta, L.M.F. Kaufmann, Technische Universiteit Eindhoven and TNO Physics and Electronics Laboratory, The Netherlands
Dispersion free doped and undoped AlGaN/GaN HEMTs on sapphire and SiC substrates
4)

J.A.Lonac, A.Santarelli, R.Paganelli, F.Filicori, University of Bologna, Italy
Numerically efficient design of highly linear microwave power amplifiers
5)

C. Florian, M.Pirazzini, G. Vannini, A. Santarelli, M. Borgarino, C. Angelone, M.Paparo, and F. Filicori, University of Bologna, University of Ferrara and ST Microelectronics, Italy
C Band DROs Using Microwave Bipolar Devices

2003

 1)

I.Melczarsky, A.Costantini, G.Zucchelli, R.P.Paganelli, A.Santarelli, G.Vannini, F.Filicori, Universities of Bologna and Ferrara, Italy
Statistical modelling of electron devices based on an equivalent-voltage approach
2)

Suba C. Subramaniam, Ali A. Rezazadeh, University of Manchester Institute of Science and Technology (UMIST), UK
He- and Fe- ion bombardments in the electrical isolation of InP/InGaAs HBT Structures
3)

Thomas E. Collins III, Andrea Betti-Berutto, and Stephen I. Long, University of California, Santa Barbara, USA
A 75 GHz Current Mode Logic Static Frequency Divider Realized in a Commercially Available InP Process
4)

F. Bertazzi, F. Cappelluti, F. Bonani et al., Politecnico di Torino, Italy
A Novel Coupled Physics-based Electromagnetic Model of Semiconductor Traveling-wave Structures for RF and Optoelectronic Applications
5)

M. De Dominicis, F. Giannini, E. Limiti et al., Università di Roma -Tor Vergata, Italy
A Novel Noise Model Extraction Technique for Microwave and Millimeter Wave HEMT

2002

 1)

V. Camarchia, E. Bellotti, M. Goano, S. Kim, G. Ghione, Boston: Politecnico di Torino, Italy
Performance evaluation of submicron channel GaN vertical transistors
2)

S.K.Manfrin, M.De Dominicis, G.Orengo, F.Giannini, M.A.Romero: University of Sao Paulo, Brazil
Fast Tuning Electronically Switched 16 x 1 Channel Receiver For Packet-Switched WDM Systems
3)

R.Cignani, C.Florian, A.Costantini, G.Vannini, F.Filicori: University of Ferrara, Italy

Circuit Architectures for Low-Phase-Noise Oscillators
4)

M. Joodaki, M. Salih, G. Kompa, et al.: University of Kassel, Germany
Improvements of thermal resistance and thermal stress in quasi-monolithic integration technology with a new fabrication process
5)

A.Costantini, C.Florian, R.Cignani, G.Vannini: Università di Bologna, Italy
Nonlinear Dynamic Modeling of Voltage Controlled Oscilators

2001

 1)

C Nuwan Dharmasiri, P J Langlois and A A Rezazadeh: King's College, London, UK
Two-tone harmonic and intermodulation distortion analysis of the InGaP/GaAs DHBT
2) Stilante M Koch, G Orengo, F Giannini, and M A Romero: University of Sao Paulo, Brazil
High tuning speed optical receiver front-end for packet-switched WDM networks
3) Federica Cappelluti, F Bonani, S Donati Guerrieri, G Ghione, C U Naldi, M Peroni, A Cetronio, and R Graffitti: Politecnico di Torino, Italy
Self consistent fully dynamic electro-thermal simulation of power HBTs
4) Mojtaba Joodaki, T Senyildiz, G Kompa, H Hillmer and R Kassing: University of Kassel, Germany
Quasi-monolithical integration technology (QMIT) for power applications
5) A Santarelli, G Zucchelli, R Paganelli, G Vannini and F Filicori: Università di Bologna, Italy
Equivalent voltage description of low frequency dispersive effects in large-signal FET models (A half of the award)
5bis) A Santarelli, G Zucchelli, R Paganelli, G Vannini and F Filicori: Università di Bologna, Italy
Equivalent voltage description of low frequency dispersive effects in large-signal FET models (A half of the award)

 
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